Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission
نویسندگان
چکیده
منابع مشابه
Voltage-Controlled Entanglement between Quantum- Dot Molecule and its Spontaneous Emission Fields via Quantum Entropy
The time evolution of the quantum entropy in a coherently driven threelevel quantum dot (QD) molecule is investigated. The entanglement of quantum dot molecule and its spontaneous emission field is coherently controlled by the gat voltage and the intensity of applied field. It is shown that the degree of entanglement between a three-level quantum dot molecule and its spontaneous emission fields...
متن کاملQuantum Dot Gate InGaAs FETs
This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTeZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface states at the channel-gate insulator boundary while providing sufficient barrier height to confine the carriers in the channel created by inversion. In additio...
متن کاملSurface plasmon-quantum dot coupling from arrays of nanoholes.
The coupling of semiconductor quantum dots (QDs) to the surface plasmon (SP) modes of nanohole arrays in a metal film was demonstrated for the first time, showing enhancement in the spontaneous emission by 2 orders of magnitude. The SP-enhanced transmission resonances of the nanohole arrays were tuned around the photoluminescence (PL) peak of polystyrene-b-poly(acrylic acid) (PS-b-PAA)-stabiliz...
متن کاملEnergy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...
متن کاملExploring and Exploiting Quantum-Dot Cellular Automata
The Full Adders (FAs) constitute the essential elements of digital systems, in a sense that they affect the circuit parameters of such systems. With respect to the MOSFET restrictions, its replacement by new devices and technologies is inevitable. QCA is one of the accomplishments in nanotechnology nominated as the candidate for MOSFET replacement. In this article 4 new layouts are presente...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2010
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3358122